<p><em>全面的宽禁带器件</em><em>组合</em><em>实现高性能充电方案</em></p>

<p><span>推动高能效创新的安森美半导体 (ON Semiconductor，美国纳斯达克上市代号：</span><a href="http://www.onsemi.cn/PowerSolutions/ir.do"><span>ON</span></a><span&gt;)，发布</span><a href="https://www.onsemi.cn/products/power-modules/sic-modules?utm_source=new…;一对1200</span></a><a href="https://www.onsemi.cn/products/power-modules/sic-modules?utm_source=new… href="https://www.onsemi.cn/products/power-modules/sic-modules?utm_source=new… href="https://www.onsemi.cn/products/power-modules/sic-modules?utm_source=new…;完整的</span></a><a href="https://www.onsemi.cn/products/power-modules/sic-modules?utm_source=new…;碳化硅 (SiC)</span></a><a href="https://www.onsemi.cn/products/power-modules/sic-modules?utm_source=new… href="https://www.onsemi.cn/products/power-modules/sic-modules?utm_source=new… 2-PACK模块，</span></a><span>进一步增强其用于</span><span>充满</span><span>挑战的</span><a href="https://www.onsemi.cn/solution/industrial-cloud-power/energy-infrastruc…;电动车 (EV)</span></a><a href="https://www.onsemi.cn/solution/industrial-cloud-power/energy-infrastruc… href="https://www.onsemi.cn/solution/industrial-cloud-power/energy-infrastruc…;市场</span></a><span>的产品系列。</span></p>

<p><span>随着电动车销售</span><span>不断</span><span>增长，必须</span><span>推出</span><span>满足</span><span>驾驶员</span><span>需求</span><span>的基础设施</span><span>，</span><span>以</span><span>提供一个快速充电</span><span>站网络，使他们能够快速完成行</span><span>程，</span><span>而</span><span>没有</span><span>“续航里程焦虑</span><span>症</span><span>”</span><span>。这一领域的要求正在迅速发展，需要超过350</span><span><span>&nbsp;</span></span><span>kW</span><span>的功率水平和95%的</span><span>能效</span><span>成为</span><span>“</span><span>常规</span><span>”</span><span>。鉴于这些充电</span><span>桩</span><span>部署在不同的环境和地点，紧凑性、</span><span>鲁棒</span><span>性和增强的可靠性</span><span>都是设计人员</span><span>面临的挑战。</span></p>

<p><span>新的1200 V M1</span><span>完整</span><span><span>&nbsp;</span></span><span>SiC MOSFET<span>&nbsp;</span></span><span>2 pack</span><span>模块，基于平面技术，适合18</span><span><span>&nbsp;</span>V</span><span>到</span><span>20 V</span><span>范围内的驱动电压，易于用负门</span><span>极电压驱动。</span><span>它</span><span>的较大裸</span><span>芯片</span><span>与沟槽式MOSFET相比，降低了热阻，从而在相同的工作温度下降低了</span><span>裸</span><span>芯片温度。</span></p>

<p><a href="https://www.onsemi.cn/products/power-modules/sic-modules/nxh010p120mnf1… href="https://www.onsemi.cn/products/power-modules/sic-modules/nxh010p120mnf1…;配置为</span><span>2-PACK</span><span>半桥架构</span><span>，是采用</span><span>F1封装的10</span><span><span>&nbsp;</span></span><span>mohm</span><span>器件，而</span><a href="https://www.onsemi.cn/products/power-modules/sic-modules/nxh006p120mnf2… href="https://www.onsemi.cn/products/power-modules/sic-modules/nxh006p120mnf2…;是</span><span>采用</span><span>F2</span><span>封装</span><span>的6</span><span><span>&nbsp;</span>mohm</span><span>器件。这些封装</span><span>采用</span><span>压接式引脚，</span><span>是</span><span>工业应用的理想选择，</span><span>且嵌入</span><span>的一个</span><span>负温系数</span><span><span>&nbsp;</span></span><span>(</span><span>NTC</span><span>)</span><span><span>&nbsp;</span></span><span>热敏电阻有助于温度监测。</span></p>

<p><span>新的SiC MOSFET</span><span>模块</span><span>是安森美半导体电动车充电生态系统的一部分，</span><span>被设计为与</span><a href="https://www.onsemi.cn/products/discretes-drivers/gate-drivers?utm_sourc…器件</span></a><span>等驱动器方案一起使用</span><span>。最近推出的</span><a href="https://www.onsemi.cn/products/discretes-drivers/gate-drivers/ncd57252?…双通道隔离</span></a><a href="https://www.onsemi.cn/products/discretes-drivers/gate-drivers/ncd57252?…;型</span></a><a href="https://www.onsemi.cn/products/discretes-drivers/gate-drivers/ncd57252?… href="https://www.onsemi.cn/products/discretes-drivers/gate-drivers/ncd57252?…;门</span></a><a href="https://www.onsemi.cn/products/discretes-drivers/gate-drivers/ncd57252?…;极驱动器</span></a><span>提供5</span><span><span>&nbsp;</span></span><span>kV的电隔离，可配置为双</span><span>下桥</span><span>、双</span><span>上桥</span><span>或半桥</span><span>工作</span><span>。</span></p>

<p><span>NCD57252采用小型SOIC-16宽体封装，接受逻辑电平输入（3.3 V、5 V和15 V）。该高电流器件（在米勒</span><span>平台</span><span>电压下，源</span><span>电流</span><span>4.0</span><span><span>&nbsp;</span></span><span>A/</span><span>灌</span><span>电流</span><span>6.0</span><span><span>&nbsp;</span></span><span>A）适合高速</span><span>工作</span><span>，因为典型传播延迟为60</span><span><span>&nbsp;</span></span><span>ns。</span></p>

<p><span>安森美半导体</span><span>的</span><span><span>&nbsp;</span></span><a href="https://www.onsemi.cn/products/wide-bandgap/silicon-carbide-sic-mosfets… MOSFET</span></a><span>与新的模块和门</span><span>极驱动器</span><span>相辅相成</span><span>，</span><span>比</span><span>类似的硅器件提供</span><span>更胜一筹</span><span>的开关性能和增强的散热</span><span>性</span><span>，令</span><span>能效和</span><span>功率密度</span><span>更高，</span><span>电磁干扰 (EMI)</span><span><span>&nbsp;</span></span><span>得以</span><span>改善</span><span>，</span><span>并减小系统尺寸和重量。</span></p>

<p><span>最近发布的<span>&nbsp;</span></span><a href="https://www.onsemi.cn/products/wide-bandgap/silicon-carbide-sic-mosfets… V SiC MOSFET</span></a><span><span>&nbsp;</span>采用新颖的有源单元设计，结合先进的薄晶圆技术，使</span><span>(</span><span>R</span><span>DS(on)</span><span>*area</span><span>)<span>&nbsp;</span></span><span>的</span><span>品质因数<span>&nbsp;</span></span><span>(FoM)</span><span><span>&nbsp;</span></span><span>达到同类最佳。</span><span>该</span><span>系列器件</span><span>如</span><a href="https://www.onsemi.cn/products/wide-bandgap/silicon-carbide-sic-mosfets…;、</span><a href="https://www.onsemi.cn/products/wide-bandgap/silicon-carbide-sic-mosfets…;、</span><a href="https://www.onsemi.cn/products/wide-bandgap/silicon-carbide-sic-mosfets…;和<span>&nbsp;</span></span><a href="https://www.onsemi.cn/products/wide-bandgap/silicon-carbide-sic-mosfets…;等</span><span>是</span><span>市场上</span><span>采用</span><span>D2PAK7L / TO247 封装的</span><span>具有</span><span>最低</span><span>R</span><span>DS(on)</span><span><span>&nbsp;</span>的MOSFET。</span></p>

<p><a href="https://www.onsemi.cn/products/wide-bandgap/silicon-carbide-sic-mosfets… V和900 V</span></a><a href="https://www.onsemi.cn/products/wide-bandgap/silicon-carbide-sic-mosfets… href="https://www.onsemi.cn/products/wide-bandgap/silicon-carbide-sic-mosfets…沟道SiC MOSFET</span></a><span>芯片尺寸</span><span>小</span><span>，减少了器件电容和门</span><span>极电荷（</span><span>Q</span><span>g</span><span><span>&nbsp;</span>- 低至220 nC），</span><span>从而减少电动车充电桩</span><span>所</span><span>需</span><span>高频</span><span>工作</span><span>的开关损耗。</span></p>

<p><span>在<span>&nbsp;</span></span><a href="https://apec-conf.org/"><span>APEC 2021</span></a><span><span>&nbsp;</span>期间，安森美半导体将展示用于</span><a href="https://www.onsemi.cn/solution/industrial-cloud-power?utm_source=news-m…;工业应用</span></a><span>的<span>&nbsp;</span></span><a href="https://www.onsemi.cn/products/wide-bandgap?utm_source=news-media&amp;u…方案</span></a><span>，并</span><span>在</span><span>展商研讨会</span><span>上介绍</span><span>电动车</span><span>非车载</span><span>充电方案</span><span>。</span></p>

<p><span>欲注册观展，请访问</span><a href="http://apec-conf.org/conference/registration/"><span>http://apec-conf.o…;。</span></p>

<p><strong>更多资源及文档：</strong></p>

<p><span>登录页：</span><a href="https://www.onsemi.cn/solution/industrial-cloud-power/energy-infrastruc…;能源基础设施</span></a></p>

<p><span>视频：</span><a href="https://www.onsemi.cn/video/25kw-sic-module-fast-ev-dc-charger-power-st… href="https://www.onsemi.cn/video/25kw-sic-module-fast-ev-dc-charger-power-st… kW SiC模块</span></a><a href="https://www.onsemi.cn/video/25kw-sic-module-fast-ev-dc-charger-power-st…;电动车直流快速充电桩电源级</span></a></p>

<p><span>白皮书：</span><a href="https://www.onsemi.cn/pub/collateral/tnd6352-d.pdf"><span>全面解析快速直流充电</s…;

<p><strong>关于安森美半导体</strong><br />
<span>安森美半导体(ON Semiconductor，美国纳斯达克上市代号：</span><a href="http://www.onsemi.cn/"><span>ON</span></a><span&gt;)致力于推动高能效电子创新，使世界更绿、更安全、包容及互联。公司已转变为客户首选的电源、模拟、传感器及联结方案供应商。公司卓越的产品帮助工程师解决他们在汽车、工业、云电源及物联网(IoT)应用中最独特的设计挑战。</span></p>

<p><span>安森美半导体运营反应敏锐、可靠的供应链及品质项目，及强大的 环境、社会、公司管治(ESG)计划。公司总部位于美国亚利桑那州菲尼克斯，在其主要市场运营包括制造厂、销售办事处及设计中心在内的全球业务网络。更多信息请访问http://www.onsemi.cn。</span></p>