<p><em>业</em><em>界</em><em>首款图腾柱P</em><em>FC</em><em>控制</em><em>器</em><em>以高性价比提供高性能</em></p>
<p><span>推动高能效创新的安森美半导体 (ON Semiconductor,美国纳斯达克上市代号:</span><a href="http://www.onsemi.cn/PowerSolutions/ir.do"><span>ON</span></a><span>),</span><span>推出</span><a href="https://www.onsemi.cn/products/power-management/ac-dc-controllers-regul…;业</span></a><a href="https://www.onsemi.cn/products/power-management/ac-dc-controllers-regul…;界</span></a><a href="https://www.onsemi.cn/products/power-management/ac-dc-controllers-regul…;首款专用临界导通模式<span> </span></span></a><a href="https://www.onsemi.cn/products/power-management/ac-dc-controllers-regul… href="https://www.onsemi.cn/products/power-management/ac-dc-controllers-regul… href="https://www.onsemi.cn/products/power-management/ac-dc-controllers-regul… href="https://www.onsemi.cn/products/power-management/ac-dc-controllers-regul…;图腾柱PFC控制器</span></a><span>,</span><span>是</span><span>该公司</span><span>超高密度离线电源方案集的新成员。</span></p>
<p><span>在传统的PFC电路中,整流桥二极管在240</span><span><span> </span></span><span>W电源中的损耗约4</span><span><span> </span></span><span>W,占总损耗的</span><span>20%左右。相比之下,PFC级的</span><span>能</span><span>效通常为97%,LLC电路实现类似的性能。然而,用 "图腾柱 "配置的开关取代有损耗的二极管,并拉入升压PFC功能,可减少电桥损耗,显著提高整体</span><span>能</span><span>效。此外,NCP1680可适</span><span>用于</span><span>任何开关类型,无论是超级结硅MOSFET还是碳化硅</span><span><span> </span>(</span><span>SiC</span><span>)</span><span><span> </span></span><span>或氮化镓</span><span><span> </span>(</span><span>GaN</span><span>)</span><span><span> </span></span><span>等</span><span>宽</span><span>禁</span><span>带开关。</span></p>
<p><span>新</span><span>的</span><span><span> </span>NCP1680 CrM 图腾柱 PFC 控制器采用新颖的电流限制架构和线路相位检测,同时结合经验证的控制算法,提供</span><span>高性价比</span><span>的图腾柱 PFC方案,而不影响性能。该 IC 的核心是内部补偿数字环路控制。该创新器件采用</span><span>含</span><span>谷</span><span>底</span><span>开关的恒定导通时间 CrM 架构。由于内置</span><span>非</span><span>连续导</span><span>通</span><span>模式<span> </span></span><span>(</span><span>DCM</span><span>)</span><span>,在频率</span><span>返走工</span><span>作期间谷</span><span>底</span><span>同步</span><span>导通</span><span>,因此可满足现代</span><span>能</span><span>效标准,包括那些</span><span>要求</span><span>在轻载下</span><span>提供</span><span>高</span><span>能</span><span>效的标准。</span></p>
<p><span>该</span><span>高度集成的器件可</span><span>使</span><span>电源设计在通用电源</span><span><span> </span>(</span><span>90<span> </span></span><span>至</span><span><span> </span>265 Vac</span><span>)</span><span><span> </span></span><span>下</span><span>以</span><span>高达350 W的</span><span>建议</span><span>功率水平</span><span>工作</span><span>。在 230 Vac 电源输入下,基于 NCP1680 的 PFC 电路能够</span><span>在 300 W实现近<span> </span></span><span>99% 的</span><span>能</span><span>效。</span><span>在</span><span>外部</span><span>只需</span><span>几个简单的</span><span>器</span><span>件即可实现</span><span>全</span><span>功能图腾柱 PFC,从而节省空间和</span><span>器</span><span>件成本。 进一步减少</span><span>器</span><span>件数,</span><span>实现逐周期电流限制</span><span>,</span><span>无需霍尔效应传感器。</span></p>
<p><span>NCP1680采用小</span><span>型</span><span>SOIC-16封装,也可作为</span><span>评估平台的一部分,</span><span>支持</span><span>快速开发和调试</span><span>先进的</span><span>图腾柱PFC设计。</span></p>
<p><span>根据图腾柱开关技术</span><span>中</span><span>,</span><span>当</span><span>中包括了高速半</span><span>桥</span><span>和低速半</span><span>桥两</span><span>路,其中在高速半</span><span>桥</span><span>上,</span><span>NCP1680 可与<span> </span></span><a href="https://www.onsemi.cn/products/discretes-drivers/gate-drivers/ncp51820?… 半桥 GaN 高电子迁移率晶体管 (HEMT</span></a><a href="https://www.onsemi.cn/products/discretes-drivers/gate-drivers/ncp51820?… href="https://www.onsemi.cn/products/discretes-drivers/gate-drivers/ncp51820?…;门极驱动器</span></a><span>或<span> </span></span><a href="https://www.onsemi.cn/products/discretes-drivers/gate-drivers/ncp51561?… 隔离型 SiC MOSFET 门极驱动器</span></a><span>一起使用。 NCP51561 是隔离</span><span>型</span><span>双通道</span><span>门</span><span>极驱动器,具有 4.5 A<span> </span></span><span>源</span><span>电流和 9 A 灌电流峰值能力。新器件适用于硅功率 MOSFET 和</span><a href="https://www.onsemi.cn/products/wide-bandgap/silicon-carbide-sic-mosfets…;基于 SiC 的 MOSFET 器件</span></a><span>的快速开关,提供短且匹配的传播延迟。两个独立的 5 kVRMS</span><span><span> </span></span><span>(</span><span>UL1577 级</span><span>)</span><span><span> </span></span><span>电隔离</span><span>门</span><span>极驱动器通道可用作两个</span><span>下桥</span><span>、两个</span><span>上桥</span><span>开关或</span><span>一个</span><span>半桥驱动器</span><span>,</span><span>具有可编程的死区时间</span><span>。</span><span>一个使能</span><span>引脚将同时关</span><span>断</span><span>两个输出,且 NCP51561 提供其他重要的保护功能,如用于</span><span>两个门</span><span>极驱动器的独立欠压锁定 (UVLO)</span><span><span> </span></span><span>和</span><span>使能</span><span>功能</span><span>。</span></p>
<p><span>安森美半导体提供</span><span>阵容</span><span>广泛的 SiC MOSFET,</span><span>它们</span><span>比硅 MOSFET 提供更高</span><span>能</span><span>效。低导通电阻 (</span><span>R</span><span>DS(on)</span><span>) 和</span><span>小巧</span><span>的芯片尺寸确保低电容和</span><span>门</span><span>极电荷 (</span><span>Q</span><span>g</span><span>),</span><span>以</span><span>在</span><span>更</span><span>小的系统尺寸中提供最高</span><span>的</span><span>能</span><span>效,从而提高功率密度。 安森美半导体已发布采用 TO-247-4L 和 D2PAK-7L 封装的<span> </span></span><a href="https://www.onsemi.cn/products/wide-bandgap/silicon-carbide-sic-mosfets… V SiC MOSFET</span></a><span>,并将继续</span><span>猛增</span><span>该产</span><span>品系列</span><span>。 此外,安森美半导体</span><span>提供</span><a href="https://www.onsemi.cn/products/discretes-drivers/mosfets?utm_source=new…;完整的硅基 650 V SUPERFET® III MOSFET 产品组合</span></a><span>。</span></p>
<p><strong>关于安森美半导体</strong><br />
<span>安森美半导体(ON Semiconductor,美国纳斯达克上市代号:</span><a href="http://www.onsemi.cn/"><span>ON</span></a><span>)致力于推动高能效电子创新,使世界更绿、更安全、包容及互联。公司已转变为客户首选的电源、模拟、传感器及联结方案供应商。公司卓越的产品帮助工程师解决他们在汽车、工业、云电源及物联网(IoT)应用中最独特的设计挑战。</span></p>
<p><span>安森美半导体运营反应敏锐、可靠的供应链及品质项目,及强大的 环境、社会、公司管治(ESG)计划。公司总部位于美国亚利桑那州菲尼克斯,在其主要市场运营包括制造厂、销售办事处及设计中心在内的全球业务网络。更多信息请访问http://www.onsemi.cn。</span></p>